No. |
Part Name |
Description |
Manufacturer |
271 |
TSC80C51-20MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
272 |
TSC80C51-25MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
273 |
TSC80C51-30MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
274 |
TSC80C51-36MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
275 |
TSC80C51-40MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
276 |
TSC80C51-44MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
277 |
TSC80C51-L16MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
278 |
TSC80C51-L20MIR/883 |
CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller |
TEMIC |
279 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
280 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
281 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
282 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
283 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
284 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
285 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
286 |
ZDS1009 |
Complementary Current Mirror |
Diodes |
287 |
ZDS1009 |
SM-8 COMPLEMENTARY CURRENT MIRROR |
Zetex Semiconductors |
288 |
ZDS1009TA |
Complementary Current Mirror |
Diodes |
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