No. |
Part Name |
Description |
Manufacturer |
271 |
2N936 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
272 |
2N937 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
273 |
2N938 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
274 |
2N939 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
275 |
2N939A |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
276 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
277 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
278 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
279 |
2SC2331 |
Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
280 |
2SC2333 |
Trans GP BJT NPN 400V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
281 |
2SC2335 |
Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
282 |
2SC2542 |
Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
283 |
2SC2625 |
Trans GP BJT NPN 400V 10A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
284 |
2SC2914 |
Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
285 |
2SC2929 |
Trans GP BJT NPN 400V 3A 3-Pin(3+Tab) TO-220AB T/R |
New Jersey Semiconductor |
286 |
2SC3725 |
Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
287 |
2SC4242 |
Trans GP BJT NPN 400V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
288 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
289 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
290 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
291 |
2SC5183 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
292 |
2SC5183-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
293 |
2SC5183-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
294 |
2SD847 |
Trans Darlington NPN 40V 15A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
295 |
39504 |
Section 4. Architecture |
Microchip |
296 |
40346 |
Trans GP BJT NPN 40V 3-Pin TO-39 |
New Jersey Semiconductor |
297 |
40347 |
Trans GP BJT NPN 40V 3-Pin TO-39 |
New Jersey Semiconductor |
298 |
40349 |
Trans GP BJT NPN 40V 3-Pin TO-39 |
New Jersey Semiconductor |
299 |
4522BP |
Programmable Divide-By-N 4-Bit counter (BCD) |
TOSHIBA |
300 |
4526BF |
Programmable Divide-By-N 4-Bit counter (Binary) |
TOSHIBA |
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