No. |
Part Name |
Description |
Manufacturer |
271 |
1SS337 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
272 |
1SS344 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
273 |
1SS345 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode |
SANYO |
274 |
1SS348 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
275 |
1SS349 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
276 |
1SS350 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode |
SANYO |
277 |
1SS351 |
Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications |
SANYO |
278 |
1SS352 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
279 |
1SS353 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
280 |
1SS354 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
281 |
1SS357 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
282 |
1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
283 |
1SS360F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
284 |
1SS361 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
285 |
1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
286 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
287 |
1SS367 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
288 |
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching Applications |
TOSHIBA |
289 |
1SS372 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
290 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
291 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
292 |
1SS378 |
Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching |
TOSHIBA |
293 |
1SS379 |
Diode Silicon Epitaxial Planar Type General Purpose Rectifier Applications |
TOSHIBA |
294 |
1SS381 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
295 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
296 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
297 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
298 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
299 |
1SS385F |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
300 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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