| No. |
Part Name |
Description |
Manufacturer |
| 271 |
AVM1504D |
single-chip 3 channels timbre generator that can synthesize |
Aplus Integrated Circuits |
| 272 |
AVM3324C |
single-chip 3 channel timbre generator that can synthesize |
Aplus Integrated Circuits |
| 273 |
AWT1921 |
The AWT 1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. |
Anadigics Inc |
| 274 |
AWT921 |
The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. |
Anadigics Inc |
| 275 |
BCM93138 |
Advanced PHY Transmitter/Receiver Evaluation System |
Broadcom |
| 276 |
BCM93214 |
DOCSIS/EURO-DOCSIS 2.0-Based Cable Modem Termination System |
Broadcom |
| 277 |
BCM93510 |
VSB/QAM Receiver Evaluation System |
Broadcom |
| 278 |
BCM94500 |
Advanced Modulation Satellite Receiver Evaluation System |
Broadcom |
| 279 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 280 |
BFP136 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 281 |
BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems |
Infineon |
| 282 |
BFP136W |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 283 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 284 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 285 |
BFP280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 286 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 287 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 288 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 289 |
BFR280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 290 |
BFR280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 291 |
BFS480 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 292 |
C2955 |
INFRARED IC INTERNAL INSPECTION SYSTEM |
Hamamatsu Corporation |
| 293 |
CC2530 |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee |
Texas Instruments |
| 294 |
CC2530F128RHAR |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
Texas Instruments |
| 295 |
CC2530F128RHAT |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
Texas Instruments |
| 296 |
CC2530F256RHAR |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
Texas Instruments |
| 297 |
CC2530F256RHAT |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
Texas Instruments |
| 298 |
CC2530F32RHAR |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
Texas Instruments |
| 299 |
CC2530F32RHAT |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
Texas Instruments |
| 300 |
CC2530F64RHAR |
Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
Texas Instruments |
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