| No. |
Part Name |
Description |
Manufacturer |
| 271 |
GM-200P-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 272 |
GM-233B-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 273 |
GM-233B-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 274 |
GM-233P-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 275 |
GM-233P-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 276 |
GXM |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 277 |
HFA3046 |
Transistors, Array, 5 NPN with One Differentially Connected Pair, Ultra High Frequency |
Intersil |
| 278 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 279 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 280 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 281 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 282 |
HYB314175BJ-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 283 |
HYB314175BJ-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 284 |
HYB314175BJL-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 285 |
HYB314175BJL-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 286 |
HYB314175BJL-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 287 |
ICL3237 |
RS-232 Transceiver, 5T/3R, +3V to 5.5V, 250kbps or 1Mbps, Manual Powerdown with Receivers Active |
Intersil |
| 288 |
ICL3237E |
RS-232 Transceiver, 5T/3R, +3V to 5.5V, 250kbps or 1Mbps, 15KV ESD (IEC61000), Manual Powerdown with Receivers Active |
Intersil |
| 289 |
IP4769CZ14 |
VGA interface ESD protection with integratedtermination resistors |
NXP Semiconductors |
| 290 |
IRDC3038 |
Reference design kit featuring 14-pin synchronous PWM controller for DDR memory application with the voltage tracking capability |
International Rectifier |
| 291 |
IRPLMB1E |
Mini-ballast for single 25W compact fluorescent ballast, European version with 230VACin |
International Rectifier |
| 292 |
ISD5116 |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 293 |
ISD5116E |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 294 |
ISD5116ED |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 295 |
ISD5116EI |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 296 |
ISD5116P |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 297 |
ISD5116S |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 298 |
ISD5116SD |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 299 |
ISD5116SI |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 300 |
ISD5116X |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
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