| No. |
Part Name |
Description |
Manufacturer |
| 271 |
317B |
Variable Capacitance Diode for tuner |
Hitachi Semiconductor |
| 272 |
317B |
Variable Capacitance Diode for Tuner |
Leshan Radio Company |
| 273 |
36NQ52 |
Noise diode for noise generator |
Tesla Elektronicke |
| 274 |
3NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 275 |
4060AL |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 276 |
4410A |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 277 |
4NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 278 |
5M15N |
Silicon Epitaxial Planar Zener Diode for Stabilizer |
Renesas |
| 279 |
5NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 280 |
6060R |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 281 |
6NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 282 |
7NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 283 |
8530UV |
Photodiode for Ultra-vlolet |
SHARP |
| 284 |
8NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 285 |
9410A |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 286 |
9410A |
Single N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 287 |
AA116 |
HF germanium diode for low-resistance rectifier |
TUNGSRAM |
| 288 |
AA119 |
HF germanium tip diode for high-resistance rectifier circuit |
TUNGSRAM |
| 289 |
AAY53 |
Germanium point-contact diode for cartridge fittings |
Siemens |
| 290 |
AAY54 |
Germanium point-contact diode for cartridge fittings |
Siemens |
| 291 |
AAY55 |
Germanium point-contact diode for cartridge fittings |
Siemens |
| 292 |
ADIS16000 |
Wireless Gateway Node for Remote Sensor |
Analog Devices |
| 293 |
AEY17 |
Germanium bonded backward diode for use at X band |
Mullard |
| 294 |
AEY29 |
Germanium bonded backward diode for use at J band |
Mullard |
| 295 |
AM29BDS320G |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
| 296 |
AM29BDS320G |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
| 297 |
AM29BDS323D |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
| 298 |
AM29BDS323DT11AWKI |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write/ Burst Mode Flash Memory |
Advanced Micro Devices |
| 299 |
AM29BDS640G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
| 300 |
AM29BDS640G |
64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
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