| No. |
Part Name |
Description |
Manufacturer |
| 271 |
C30665G-TC |
Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler. |
PerkinElmer Optoelectronics |
| 272 |
C30737 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 273 |
C30737E-230 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 274 |
C30737E-500 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 275 |
C30737P-230 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 276 |
C30737P-500 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 277 |
C30807 |
N-Type Silicon PIN Photodetectors |
PerkinElmer Optoelectronics |
| 278 |
C30808 |
N-Type Silicon PIN Photodetectors |
PerkinElmer Optoelectronics |
| 279 |
C30809 |
N-Type Silicon PIN Photodetectors |
PerkinElmer Optoelectronics |
| 280 |
C30810 |
N-Type Silicon PIN Photodetectors |
PerkinElmer Optoelectronics |
| 281 |
C30822 |
N-Type Silicon PIN Photodetectors |
PerkinElmer Optoelectronics |
| 282 |
C30831 |
N-Type Silicon PIN Photodetectors |
PerkinElmer Optoelectronics |
| 283 |
C30902E |
Silicon Avalanche Photodiodes |
PerkinElmer Optoelectronics |
| 284 |
C30902S |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
| 285 |
C30921E |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
| 286 |
C30921S |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
| 287 |
C30957E |
N TYPE SILICON P- I - N PHOTODETECTOR |
etc |
| 288 |
C4258 |
PICOSECOND PHOTODETECTOR |
Hamamatsu Corporation |
| 289 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 290 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 291 |
C4258-03 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 292 |
C4675 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 293 |
C4675-102 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 294 |
C4675-103 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 295 |
C4675-302 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 296 |
C4890 |
Pin photodiode amplifier |
Hamamatsu Corporation |
| 297 |
C8366 |
Supply voltage: +-18V; current-to-voltage conversionphotosensor amplifier for high-speed Si PIN photodiode |
Hamamatsu Corporation |
| 298 |
C9004 |
Driver circuit for Si photodiode array |
Hamamatsu Corporation |
| 299 |
C9052 |
Si photodiode evaluation circuit |
Hamamatsu Corporation |
| 300 |
C9052-01 |
Si photodiode evaluation circuit |
Hamamatsu Corporation |
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