| No. |
Part Name |
Description |
Manufacturer |
| 271 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 272 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 273 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 274 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 275 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 276 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 277 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 278 |
G7189 |
GaAsP photodiode |
Hamamatsu Corporation |
| 279 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 280 |
G7871-02 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 281 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
| 282 |
G7881-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 283 |
G7881-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 284 |
G7881-23 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 285 |
G7881-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 286 |
G7881-44 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 287 |
G8194 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 288 |
G8194-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 289 |
G8194-22 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 290 |
G8194-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 291 |
G8194-32 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 292 |
G8194-44 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 293 |
G8195 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 294 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 295 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 296 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 297 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 298 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 299 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 300 |
G8198 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
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