No. |
Part Name |
Description |
Manufacturer |
271 |
HM628128ALFP-10SL |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
272 |
HM628128ALFP-10SL |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
273 |
HM628128ALP-10 |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
274 |
HM628128ALP-10 |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
275 |
HM628128ALP-10L |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
276 |
HM628128ALP-10L |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
277 |
HM628128ALP-10SL |
131,072-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
278 |
HM628128ALP-10SL |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
279 |
HM628128FP-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
280 |
HM628128LFP-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
281 |
HM628128LFP-10SL |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
282 |
HM628128LP-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
283 |
HM628128LP-10SL |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
284 |
HM628128P-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
285 |
HM628511HCJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
286 |
HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
287 |
HM628511HJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
288 |
HM628511HLJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
289 |
HM62V256LFP-10SLT |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
290 |
HM62V256LFP-10T |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
291 |
HM62W16255HCJP-10 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
292 |
HM62W16255HCLJP-10 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
293 |
HM62W4100HCJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
294 |
HM62W4100HCLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
295 |
HM62W8511HCJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
296 |
HM62W8511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
297 |
HM658512ALFP-10 |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
298 |
HM658512ALFP-10V |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
299 |
HM658512ALP-10 |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
300 |
HM658512ALP-10V |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
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