| No. |
Part Name |
Description |
Manufacturer |
| 271 |
BFP177 |
Tranzystor krzemowy �redniej mocy, wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 272 |
BFP178 |
Tranzystor krzemowy �redniej mocy, wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 273 |
BFP179 |
Tranzystor krzemowy �redniej mocy, wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 274 |
BSP17 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
Siemens |
| 275 |
BSP170 |
P-Channel SIPMOS Small-Signal Transistor |
Infineon |
| 276 |
BSP170 |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Avalanche rated) |
Siemens |
| 277 |
BSP170P |
P-Channel SIPMOS Small-Signal Transistor |
Infineon |
| 278 |
BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30 |
Infineon |
| 279 |
BSP170P |
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) |
Siemens |
| 280 |
BSP171 |
P-Channel SIPMOS Small-Signal Transistor |
Infineon |
| 281 |
BSP171 |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated) |
Siemens |
| 282 |
BSP171P |
P-Channel SIPMOS Small-Signal Transistor |
Infineon |
| 283 |
BSP171P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30 |
Infineon |
| 284 |
BSP171P |
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated) |
Siemens |
| 285 |
BSP17E6327 |
N-Channel SIPMOS Small-Signal Transistor |
Infineon |
| 286 |
BZW04P17 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 287 |
BZW04P17 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 288 |
BZW04P171 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 289 |
BZW04P171 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 290 |
BZW04P171B |
Glass Passivated Junction Transient Voltage Suppressor |
General Semiconductor |
| 291 |
CHF5KP17 |
Transient Voltage Suppressor |
Microsemi |
| 292 |
CHF5KP17A |
Transient Voltage Suppressor |
Microsemi |
| 293 |
CNSP17 |
Transoptor |
Ultra CEMI |
| 294 |
CP176 |
Chip Form: POWER TRANSISTOR |
Central Semiconductor |
| 295 |
CP178 |
Chip Form: SILICON DARLINGTON TRANSISTOR |
Central Semiconductor |
| 296 |
CQYP17 |
Dioda elektroluminescencyjna (promieniowanie podczerwone) |
Ultra CEMI |
| 297 |
CQYP17 |
Dioda elektroluminescencyjna |
Ultra CEMI |
| 298 |
CXP834P17 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 299 |
D2525P17 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 191.7. Wavelength 1563.86. Tolerance +-0.4nm. |
Agere Systems |
| 300 |
D2547P17 |
Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules |
Agere Systems |
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