| No. |
Part Name |
Description |
Manufacturer |
| 271 |
SFH325FA-3 |
Silicon NPN phototransistor |
Siemens |
| 272 |
SFH325FA-4 |
Silicon NPN phototransistor |
Siemens |
| 273 |
SFH3400 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 274 |
SFH3400-2 |
Silicon NPN phototransistor |
Siemens |
| 275 |
SFH3400-3 |
Silicon NPN phototransistor |
Siemens |
| 276 |
SFH3401 |
Silicon NPN phototransistor |
Siemens |
| 277 |
TEFT4300 |
Silicon NPN Phototransistor |
Vishay |
| 278 |
TEKT5400S |
Silicon NPN Phototransistor |
Vishay |
| 279 |
TEKT5400S-ASZ |
Silicon NPN Phototransistor |
Vishay |
| 280 |
TEMT3700 |
Silicon NPN Phototransistor |
Vishay |
| 281 |
TEMT4700 |
Silicon NPN Phototransistor |
Vishay |
| 282 |
TEST2600 |
Silicon NPN Phototransistor |
Vishay |
| 283 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 284 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 285 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 286 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 287 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 288 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 289 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 290 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 291 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 292 |
VTT1015 |
.050 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 293 |
VTT1016 |
.050 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 294 |
VTT1017 |
.050 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 295 |
VTT1115 |
.050 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 296 |
VTT1116 |
.050 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 297 |
VTT1117 |
.050 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 298 |
VTT1212 |
.040 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 299 |
VTT1214 |
.040 NPN Phototransistors |
PerkinElmer Optoelectronics |
| 300 |
VTT1222W |
.025 NPN Phototransistors |
PerkinElmer Optoelectronics |
| | | |
