| No. |
Part Name |
Description |
Manufacturer |
| 271 |
BXY13C |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 272 |
BXY13D |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 273 |
BXY14 |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 274 |
BXY14E |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 275 |
BXY14F |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 276 |
BXY14GA |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 277 |
BXY15 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 278 |
BXY15CA |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 279 |
BXY15CA1 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 280 |
BXY15CA2 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 281 |
BXY15E |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 282 |
BXY15E1 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 283 |
BXY15E2 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 284 |
BXY27 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band and input powers up to 10W |
Mullard |
| 285 |
CA2830 |
Thin Film RF Linear Hybrid Amplifier High Gain 34.5dB, 1W Output power at 28V |
TRW |
| 286 |
CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 287 |
CGD1042H |
1 GHz, 23 dB gain high output power doubler |
NXP Semiconductors |
| 288 |
CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 289 |
CGD1044H |
1 GHz, 25 dB gain high output power doubler |
NXP Semiconductors |
| 290 |
CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 291 |
CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 292 |
CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 293 |
CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 294 |
CGD987HCI |
1 GHz, 27 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 295 |
CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 296 |
CGY184 |
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
Siemens |
| 297 |
CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 298 |
CZA04S CZA06S |
Surface Mount Chip Attenuator, Tolerance matching and temperature tracking superior to individual components, Maximum input power: 75 milliwatts for CZA06S; 40 milliwatts for CZA04S, Frequency range: DC to 3GHz |
Vishay |
| 299 |
D2805D |
10W Total Output Power 28 Vin +/-5 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 300 |
D2812D |
10W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
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