| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SB806 |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 272 |
2SB943 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 273 |
2SB954 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 274 |
2SB954A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 275 |
2SC116T |
Silicon Transistor NPN Triple Diffued Planar, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 276 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 277 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 278 |
2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 279 |
2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 280 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
| 281 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
| 282 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 283 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 284 |
2SC2780 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 285 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 286 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 287 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 288 |
2SC2922 |
Transistor For Power Amplifier |
Sanken |
| 289 |
2SC2954 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 290 |
2SC3357 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 291 |
2SC3554 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 292 |
2SC3617 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 293 |
2SC3618 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 294 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 295 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 296 |
2SC3733 |
NPN transistor for power amplifier and high speed switching applications |
NEC |
| 297 |
2SC3734 |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 298 |
2SC3735 |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 299 |
2SC3735-T2B |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 300 |
2SC3739 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
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