| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 272 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 273 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 274 |
2N4440 |
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C |
Microsemi |
| 275 |
2N5031 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 276 |
2N5109 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 277 |
2N5179 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 278 |
2N5596 |
Application Note - Match impedances in microwave amplifiers |
Motorola |
| 279 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
| 280 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 281 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 282 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 283 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 284 |
2N6255 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 285 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 286 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 287 |
2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 288 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 289 |
2SA1977 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
| 290 |
2SA1978 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
| 291 |
2SC1193 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 292 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 293 |
2SC1236 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
| 294 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
| 295 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 296 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 297 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 298 |
2SC2150 |
NPN silicon microwave transistor (This datasheet of NE57835 is also the datasheet of 2SC2150, see the Electrical Characteristics table) |
NEC |
| 299 |
2SC2952 |
NPN medium power microwave transistor (This datasheet of NE24615 is also the datasheet of 2SC2952, see the Electrical Characteristics table) |
NEC |
| 300 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
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