| No. |
Part Name |
Description |
Manufacturer |
| 271 |
CXK77B1810AGB-5 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 272 |
CXK77B1810AGB-6 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 273 |
CXK77B3610GB |
-High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 274 |
CXK77B3610GB |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 275 |
CXK77B3610GB-6 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 276 |
CXK77B3610GB-7 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 277 |
CXK77B3611AGB |
-High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 278 |
CXK77B3611AGB |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 279 |
CXK77B3611AGB-5 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 280 |
CXK77B3611AGB-6 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
| 281 |
CXK77V3211Q |
32768-word by 32-bit High Speed Synchronous Static RAM |
SONY |
| 282 |
CY7C1062AV33-8BGI |
The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. |
Cypress |
| 283 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 284 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 285 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 286 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 287 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 288 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 289 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 290 |
DS_K6X8008C2B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 291 |
EDI20180C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 292 |
EDI20181C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 293 |
EDI20182C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 294 |
EDI20183C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 295 |
EDI20184C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 296 |
EDI20185C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 297 |
EDI2040C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 298 |
EDI2041C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 299 |
EDI2042C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
| 300 |
EDI2043C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
| | | |
