No. |
Part Name |
Description |
Manufacturer |
271 |
BFR35 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
272 |
BFR35AP |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
273 |
BFR360F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators and VCO Modules up to 4 GHz |
Infineon |
274 |
BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz |
Infineon |
275 |
BFR360T |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators up to 4GHz |
Infineon |
276 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
277 |
BFR380F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
278 |
BFR380T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
279 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
280 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
281 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
282 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
283 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
284 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
285 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
286 |
BFS17P |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
287 |
BFS17S |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
288 |
BFS17W |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
289 |
BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
Infineon |
290 |
BFS360L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
291 |
BFS380L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package for LNA and VCO Modules up to 4GHz |
Infineon |
292 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
293 |
BFS55 |
NPN transistor for RF applications up to the GHz range |
Siemens |
294 |
BFS62 |
Silicon NON epitaxial planar transistor for general applications up to VHF range |
AEG-TELEFUNKEN |
295 |
BFT92 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
296 |
BFT92 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
297 |
BFT92W |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
298 |
BFT92W |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
299 |
BFT93 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
300 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
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