| No. |
Part Name |
Description |
Manufacturer |
| 271 |
IRFP9241 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 272 |
IRFP9242 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 273 |
IRFP9243 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 274 |
IRFR010 |
N Channel Power MOSFETs |
Samsung Electronic |
| 275 |
IRLZ40 |
N-CHANNEL LOGIC LEVEL MOSFET |
Samsung Electronic |
| 276 |
IRLZ44A |
ADVANCED POWER MOSFET |
Samsung Electronic |
| 277 |
ISL9860PF2 |
8A, 600V Stealth Diode |
Samsung Electronic |
| 278 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
| 279 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 280 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 281 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 282 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 283 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 284 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 285 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 286 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 287 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
| 288 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 289 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 290 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 291 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 292 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 293 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 294 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 295 |
K3N3C1000D-D(G)C, K3N3C1000D-TC(E) |
4M-Bit (512K x 8/256K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 296 |
K3N3C1000D-D(G)C, K3N3C1000D-TC(E) |
4M-Bit (512K x 8/256K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 297 |
K3N3C3000D-D(G)C, K3N3C3000D-YC(E) |
4M-Bit (512K x 8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 298 |
K3N3C3000D-D(G)C, K3N3C3000D-YC(E) |
4M-Bit (512K x 8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 299 |
K3N3C6000D-DC |
4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet |
Samsung Electronic |
| 300 |
K3N3V(U)1000D-D(G)C, K3N3V(U)1000D-TC(E) |
4M-Bit (512K x 8/256K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
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