| No. |
Part Name |
Description |
Manufacturer |
| 271 |
B4S |
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes) |
Panjit International Inc |
| 272 |
B6S |
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes) |
Panjit International Inc |
| 273 |
B8S |
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes) |
Panjit International Inc |
| 274 |
BA157 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 275 |
BA157 |
FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 276 |
BA158 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 277 |
BA158 |
FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 278 |
BA159 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 279 |
BA159 |
FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 280 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 281 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 282 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 283 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 284 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 285 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 286 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 287 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 288 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 289 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 290 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 291 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 292 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 293 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 294 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 295 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 296 |
BG3123 |
RF-MOSFET - Package: SOT363 |
Infineon |
| 297 |
BG3130 |
RF-MOSFET - Package: SOT363 |
Infineon |
| 298 |
BG3130R |
RF-MOSFET - Package:SOT363 |
Infineon |
| 299 |
BG3140 |
RF-MOSFET - Package: SOT363 |
Infineon |
| 300 |
BG3140R |
RF-MOSFET - Package: SOT363 |
Infineon |
| | | |
