| No. |
Part Name |
Description |
Manufacturer |
| 271 |
EB6 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
| 272 |
EB8 |
Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
| 273 |
EL7581 |
DC-DC Converter, 3-Channel, TFT/LCD Applications, V IN =2/14V VBOOST =5/18V, VON =5/40V, VOFF =-40/0V, IBOOST 720mA @ 12V |
Intersil |
| 274 |
FDA032N08 |
N-Channel PowerTrench� MOSFET 75V, 235A, 3.2m? |
Fairchild Semiconductor |
| 275 |
FDB031N08 |
N-Channel PowerTrench� MOSFET 75V, 235A, 3.1m? |
Fairchild Semiconductor |
| 276 |
FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m�� |
Fairchild Semiconductor |
| 277 |
FDB045AN08A0 |
N-Channel UltraFET � Trench MOSFET 75V, 80A, 4.5mOhm |
Fairchild Semiconductor |
| 278 |
FDB045AN08_F085 |
N-Channel PowerTrench� MOSFET 75V, 80A, 4.5m? |
Fairchild Semiconductor |
| 279 |
FDB088N08 |
N-Channel PowerTrench� MOSFET 75V, 85A, 8.8m? |
Fairchild Semiconductor |
| 280 |
FDB16AN08A0 |
N-Channel PowerTrench � MOSFET 75V, 58A, 16mOhm |
Fairchild Semiconductor |
| 281 |
FDD16AN08A0 |
N-Channel UltraFET � Trench MOSFET 75V, 50A, 16mOhm |
Fairchild Semiconductor |
| 282 |
FDD16AN08_F085 |
N-Channel UltraFET� Trench MOSFET 75V, 50A, 16m? |
Fairchild Semiconductor |
| 283 |
FDMS037N08B |
N-Channel PowerTrench� MOSFET 75V, 100A, 3.7m? |
Fairchild Semiconductor |
| 284 |
FDP032N08 |
N-Channel PowerTrench� MOSFET 75V, 235A, 3.2m? |
Fairchild Semiconductor |
| 285 |
FDP047AN08 |
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.7m |
Fairchild Semiconductor |
| 286 |
FDP047AN08A0 |
N-Channel UltraFET � Trench MOSFET 75V, 80A, 4.7mOhm |
Fairchild Semiconductor |
| 287 |
FDP047N08 |
N-Channel PowerTrench� MOSFET 75V, 164A, 4.7m? |
Fairchild Semiconductor |
| 288 |
FDP16AN08A0 |
N-Channel PowerTrench � MOSFET 75V, 58A, 16mOhm |
Fairchild Semiconductor |
| 289 |
FDP75N08A |
N-Channel UniFETTM MOSFET 75V, 75A, 11m? |
Fairchild Semiconductor |
| 290 |
GL3820 |
1 Video Output 75U-1 VPP No Switched |
Hynix Semiconductor |
| 291 |
GTVA107001EC/FC-V1 |
High Power RF GaN on SiC HEMT 700W, 50V, 960 - 1215 MHz |
Wolfspeed |
| 292 |
GTVA220701FA-V1 |
High Power RF GaN on SiC HEMT 70W, 50V, 1805 - 2170 MHz |
Wolfspeed |
| 293 |
HA-4905 |
Comparator, Analog, Precision, Voffset 10mV, Ioffset 70nA, Ibias 300nA, Quad |
Intersil |
| 294 |
IL1083 |
IC of adjustable voltage regulator of positive polarity with low residual voltage and load current 7,5 |
INTEGRAL |
| 295 |
IRF6626 |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes. |
International Rectifier |
| 296 |
IRF6626TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes. |
International Rectifier |
| 297 |
IRF6626TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes. |
International Rectifier |
| 298 |
IRF6626TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes. |
International Rectifier |
| 299 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
| 300 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
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