| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N5096 |
HIGH ENERCY NPN TRANSISTOR |
Solid State Devices Inc |
| 272 |
2N5097 |
600 V, 1 A high voltage NPN transistor |
Solid State Devices Inc |
| 273 |
2N5151 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
| 274 |
2N5152 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
| 275 |
2N5153 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
| 276 |
2N5154 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
| 277 |
2N5330 |
150 V, 30 A high speed NPN transistor |
Solid State Devices Inc |
| 278 |
2N5338 |
100 V, 5 A high voltage NPN transistor |
Solid State Devices Inc |
| 279 |
2N5339 |
100 V, 5 A high voltage NPN transistor |
Solid State Devices Inc |
| 280 |
2N5659 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
| 281 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
| 282 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
| 283 |
2N6192 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
| 284 |
2N6193 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
| 285 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 286 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 287 |
2SA2029-Q |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 288 |
2SA2029-R |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 289 |
2SA2029-S |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 290 |
2SC5658-Q |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 291 |
2SC5658-R |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 292 |
2SC5658-S |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 293 |
31DF4 |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 294 |
31DF6 |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 295 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 296 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 297 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 298 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 299 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 300 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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