No. |
Part Name |
Description |
Manufacturer |
271 |
TC07VUA |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
272 |
TC620 |
The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo |
Microchip |
273 |
TC621 |
The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo |
Microchip |
274 |
TC670ECH |
Tiny Predictive Fan Failure Detector |
Microchip |
275 |
TDA8040T |
Quadrature demodulator |
Philips |
276 |
TDA8041H |
Quadrature demodulator controller |
Philips |
277 |
TDA8042 |
Quadrature demodulator |
Philips |
278 |
TDA8042M |
Quadrature demodulator |
Philips |
279 |
TDA8042M_C1 |
Quadrature demodulator |
Philips |
280 |
U2791B |
1000 MHz Quadrature Demodulator |
TEMIC |
281 |
U2791B-FS |
1000 MHz Quadrature Demodulator |
TEMIC |
282 |
U2794 |
1000 MHz Quadrature Demodulator |
TEMIC |
283 |
U2794B |
1000-MHz quadrature demodulator for cellular phones and hybrid fibre coax |
Atmel |
284 |
U2794B |
1000 MHz Quadrature Demodulator |
TEMIC |
285 |
U2794B-AFS |
1000 MHz Quadrature Demodulator |
TEMIC |
286 |
U2794B-AFSG3 |
1000 MHz Quadrature Demodulator |
TEMIC |
287 |
U2794B-MFS |
1000 MHZ QUADRATURE DEMODULATOR |
Atmel |
288 |
U2794B-MFSG3 |
1000 MHZ QUADRATURE DEMODULATOR |
Atmel |
289 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
290 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
291 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
292 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
293 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
294 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
295 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
296 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
297 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
298 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
299 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
300 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |