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Datasheets for URE DE

Datasheets found :: 304
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No. Part Name Description Manufacturer
271 TC07VUA TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
272 TC620 The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo Microchip
273 TC621 The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo Microchip
274 TC670ECH Tiny Predictive Fan Failure Detector Microchip
275 TDA8040T Quadrature demodulator Philips
276 TDA8041H Quadrature demodulator controller Philips
277 TDA8042 Quadrature demodulator Philips
278 TDA8042M Quadrature demodulator Philips
279 TDA8042M_C1 Quadrature demodulator Philips
280 U2791B 1000 MHz Quadrature Demodulator TEMIC
281 U2791B-FS 1000 MHz Quadrature Demodulator TEMIC
282 U2794 1000 MHz Quadrature Demodulator TEMIC
283 U2794B 1000-MHz quadrature demodulator for cellular phones and hybrid fibre coax Atmel
284 U2794B 1000 MHz Quadrature Demodulator TEMIC
285 U2794B-AFS 1000 MHz Quadrature Demodulator TEMIC
286 U2794B-AFSG3 1000 MHz Quadrature Demodulator TEMIC
287 U2794B-MFS 1000 MHZ QUADRATURE DEMODULATOR Atmel
288 U2794B-MFSG3 1000 MHZ QUADRATURE DEMODULATOR Atmel
289 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
290 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
291 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
292 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
293 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
294 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
295 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
296 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
297 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
298 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
299 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
300 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 304
Page: | 6 | 7 | 8 | 9 | 10 | 11 |



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