| No. |
Part Name |
Description |
Manufacturer |
| 271 |
CP3UB26G18NEPX/NOPB |
Reprogrammable Connectivity Processor with USB and CAN Interfaces 128-LQFP |
Texas Instruments |
| 272 |
CP3UB26Y98NEP |
Reprogrammable Connectivity Processor with USB and CAN Interfaces |
National Semiconductor |
| 273 |
CPCL, CPCC, CPCP, CPCF |
Commercial Power, Vertical Mount, Space Saving, Meets or Exceeds Requirements of EIA Standard RS-344, Fireproof Inorganic Construction, High Thermal Conductivity and Humidity Resistance |
Vishay |
| 274 |
CPL |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems |
Vishay |
| 275 |
CPSL |
Low Value, Commercial Power, Four Lead, Fireproof Inorganic Construction, Current Sensing, High Power/Size Ratio, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems |
Vishay |
| 276 |
CPSM |
Commercial Power, Fireproof Inorganic Construction, High Wattage Capabilities, Low Board Temperatures, Suitable for Pick and Place Equipment, Meets or Exceeds EIA RS-344 Spec, High Thermal Conductivity and Humidity Resistance |
Vishay |
| 277 |
CPW |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, Non-inductive Styles Available, High Thermal Conductivity and Humidity Resistance |
Vishay |
| 278 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 279 |
CY62147EV30LL-45BVIT |
4-Mbit (256K x 16) Static RAM |
Cypress |
| 280 |
CY62148EV30LL-45BVIT |
4-Mbit (512 K � 8) Static RAM |
Cypress |
| 281 |
CY62157EV30LL-45BVIT |
8-Mbit (512 K � 16) Static RAM |
Cypress |
| 282 |
CY62167DV18LL-55BVIT |
16M (1024K x 16) Static RAM |
Cypress |
| 283 |
CY62167DV30LL-55BVIT |
16-Mbit (1M x 16) Static RAM |
Cypress |
| 284 |
CY62167DV30LL-70BVIT |
16-Mbit (1M x 16) Static RAM |
Cypress |
| 285 |
CY62167EV18LL-55BVIT |
16 Mbit (1M x 16) Static RAM |
Cypress |
| 286 |
CY62167EV30LL-45BVIT |
16-Mbit (1M x 16 / 2M x 8) Static RAM |
Cypress |
| 287 |
CY62168DV30LL-55BVIT |
16-Mbit (2 M � 8) Static RAM |
Cypress |
| 288 |
CY7C1041DV33-10BVIT |
4-Mbit (256 K � 16) Static RAM |
Cypress |
| 289 |
CY7C185-15VIT |
64-Kbit (8 K � 8) Static RAM |
Cypress |
| 290 |
CY8C22213-24PVIT |
PSoC Mixed Signal Array |
Cypress |
| 291 |
CY8C24223-24PVIT |
PSoC mixed signal array. Flash 4 Kbytes. RAM 256 Bytes. Switch mode Pump yes. |
Cypress |
| 292 |
CY8C24423-24PVIT |
PSoC mixed signal array. Flash 4 Kbytes. RAM 256 Bytes. Switch mode Pump yes. |
Cypress |
| 293 |
CY8C27243-24PVIT |
PSoC Mixed Signal Array |
Cypress |
| 294 |
CY8C27443-24PVIT |
PSoC Mixed Signal Array |
Cypress |
| 295 |
CY8C27643-24PVIT |
PSoC Mixed Signal Array |
Cypress |
| 296 |
D20B |
20 Lead Ceramic Sidebrazed Dual-in-Line Package, Dual Cavity |
National Semiconductor |
| 297 |
D28G |
28 Lead Ceramic Sidebrazed Dual-in-Line Package, Dual Cavity |
National Semiconductor |
| 298 |
D28H |
28 Lead Ceramic Sidebrazed Dual-in-Line Package, Dual Cavity |
National Semiconductor |
| 299 |
DN8893 |
High Sensitivity Hall IC (Operation in Alternative Magnetic Field) |
Panasonic |
| 300 |
DN8893MS |
High Sensitivity Hall IC (Operating in Alternative Magnetic Field) |
Panasonic |
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