| No. |
Part Name |
Description |
Manufacturer |
| 271 |
D28G |
28 Lead Ceramic Sidebrazed Dual-in-Line Package, Dual Cavity |
National Semiconductor |
| 272 |
D28H |
28 Lead Ceramic Sidebrazed Dual-in-Line Package, Dual Cavity |
National Semiconductor |
| 273 |
DN8893 |
High Sensitivity Hall IC (Operation in Alternative Magnetic Field) |
Panasonic |
| 274 |
DN8893MS |
High Sensitivity Hall IC (Operating in Alternative Magnetic Field) |
Panasonic |
| 275 |
DS2Y |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 276 |
DS2Y-S-DC1.5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 277 |
DS2Y-S-DC12V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 278 |
DS2Y-S-DC24V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 279 |
DS2Y-S-DC3V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 280 |
DS2Y-S-DC48V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 281 |
DS2Y-S-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 282 |
DS2Y-S-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 283 |
DS2Y-S-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 284 |
DS2Y-SL2-DC1.5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 285 |
DS2Y-SL2-DC12V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 286 |
DS2Y-SL2-DC24V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 287 |
DS2Y-SL2-DC3V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 288 |
DS2Y-SL2-DC48V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 289 |
DS2Y-SL2-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 290 |
DS2Y-SL2-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 291 |
DS2Y-SL2-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 292 |
EA028C |
28 Lead Ceramic Leadless Chip Carrier, Dual Cavity |
National Semiconductor |
| 293 |
EL44B |
44 Lead Ceramic Quad J-Bend, Dual Cavity |
National Semiconductor |
| 294 |
EL68B |
68 Lead Ceramic Quad J-Bend, Dual Cavity |
National Semiconductor |
| 295 |
ENWF9201A1EF |
Wireless Connectivity: Bluetooth & Wi-Fi Combo - PAN9026 |
Panasonic |
| 296 |
EP1F |
HIGH HEAT RESISTIVITY |
NEC |
| 297 |
EP1F-B3G1 |
HIGH HEAT RESISTIVITY |
NEC |
| 298 |
EP1F-B3G1T |
HIGH HEAT RESISTIVITY |
NEC |
| 299 |
EP1F-B3G1TT |
HIGH HEAT RESISTIVITY |
NEC |
| 300 |
EP1F-B3G2 |
HIGH HEAT RESISTIVITY |
NEC |
| | | |
