| No. |
Part Name |
Description |
Manufacturer |
| 2731 |
16YQ045C |
16A 45V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2732 |
16YQ045CSCS |
16A 45V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2733 |
16YQ045CSCS |
16A 45V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2734 |
16YQ100C |
100V 16A Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2735 |
16YQ100C |
100V 16A Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2736 |
16YQ100CSCS |
16A 100V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2737 |
16YQ100CSCS |
16A 100V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2738 |
16YQ150C |
16A 150V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2739 |
16YQ150C |
16A 150V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2740 |
16YQ150CSCS |
16A 150V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2741 |
16YQ150CSCS |
16A 150V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 2742 |
17 ZSIP-H/S |
Package Dimensions |
Samsung Electronic |
| 2743 |
171J |
High Voltage Differential FET Amplifier |
Intronics |
| 2744 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 2745 |
175BGQ030 |
30V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2746 |
175BGQ030 |
30V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2747 |
175BGQ030J |
30V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2748 |
175BGQ030J |
30V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2749 |
175BGQ045 |
45V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2750 |
175BGQ045 |
45V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 2751 |
175BGQ045J |
45V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2752 |
175BGQ045J |
45V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 2753 |
17P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 2754 |
18 DIP |
Package Dimensions |
Samsung Electronic |
| 2755 |
18 DIP |
Package Dimensions |
Samsung Electronic |
| 2756 |
18 ZIP |
18ZIP Package Dimensions |
Samsung Electronic |
| 2757 |
180NQ035 |
35V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 2758 |
180NQ035 |
35V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 2759 |
180NQ040 |
40V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 2760 |
180NQ040 |
40V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
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