| No. |
Part Name |
Description |
Manufacturer |
| 2731 |
2SD1431 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
| 2732 |
2SD868 |
POWER TRANSISTORS(2.5A,1500V,50W) |
MOSPEC Semiconductor |
| 2733 |
2SD870 |
POWER TRANSISTORS(5A,1500V,50W) |
MOSPEC Semiconductor |
| 2734 |
2SD870 |
Silicon NPN triple diffused MESA high voltage (1500V) transistor |
TOSHIBA |
| 2735 |
2SD871 |
POWER TRANSISTORS(6A,1500V,50W) |
MOSPEC Semiconductor |
| 2736 |
2SD897A |
POWER TRANSISTORS(1.5A,1500V,50W) |
MOSPEC Semiconductor |
| 2737 |
2SK3745LS |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-220F-3FS |
ON Semiconductor |
| 2738 |
2SK3746 |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-3P-3L |
ON Semiconductor |
| 2739 |
2SK3747 |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-3PF-3L |
ON Semiconductor |
| 2740 |
2SK3748 |
N-Channel Power MOSFET, 1500V, 4A, 7Ohm, TO-3PF-3L |
ON Semiconductor |
| 2741 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 2742 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2743 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2744 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2745 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2746 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2747 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2748 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2749 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2750 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2751 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2752 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2753 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2754 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2755 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2756 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2757 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2758 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2759 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2760 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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