No. |
Part Name |
Description |
Manufacturer |
2731 |
KM416V1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
2732 |
KM416V1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
2733 |
KM416V1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
2734 |
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2735 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
2736 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
2737 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
2738 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
2739 |
KM416V254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
2740 |
KM416V254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
2741 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
2742 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
2743 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
2744 |
KM416V254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
2745 |
KM416V254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
2746 |
KM416V254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
2747 |
KM416V256D |
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
2748 |
KM416V256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
2749 |
KM416V256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V |
Samsung Electronic |
2750 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
2751 |
KM416V256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
2752 |
KM416V256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
2753 |
KM416V256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
2754 |
KM416V256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
2755 |
KM416V256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
2756 |
KM416V256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
2757 |
KM416V256DT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
2758 |
KM416V256DT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V |
Samsung Electronic |
2759 |
KM416V256DT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
2760 |
KM416V4000B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
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