| No. |
Part Name |
Description |
Manufacturer |
| 2731 |
CHA5290-99F/00 |
17.7-24GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2732 |
CHA5292A |
37-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2733 |
CHA5292A-99F/00 |
37-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2734 |
CHA5390 |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2735 |
CHA5390-99F |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2736 |
CHA5390TBF |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2737 |
CHA5390TBF/24 |
24-30GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 2738 |
CJF122 |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. |
Continental Device India Limited |
| 2739 |
CJF127 |
30.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE. |
Continental Device India Limited |
| 2740 |
CJF15028 |
36.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2741 |
CJF15029 |
36.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. Complementary CJF15028 |
Continental Device India Limited |
| 2742 |
CJF15030 |
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2743 |
CJF15031 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE. |
Continental Device India Limited |
| 2744 |
CJF15032 |
50.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 2745 |
CJF15033 |
50.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 2746 |
CJF2955 |
30.000W Medium Power PNP Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
| 2747 |
CJF3055 |
30.000W Medium Power NPN Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
| 2748 |
CJF6107 |
34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE. |
Continental Device India Limited |
| 2749 |
CJF6388 |
40.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 10.000A Ic, 100 hFE. |
Continental Device India Limited |
| 2750 |
CM10MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2751 |
CM10MD-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2752 |
CM10MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2753 |
CM10MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2754 |
CM15MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2755 |
CM15MD-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2756 |
CM15MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2757 |
CM15MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2758 |
CM15TF-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2759 |
CM15TF-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2760 |
CM20MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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