| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
IRF131 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 2762 |
IRF131 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 14A |
Siliconix |
| 2763 |
IRF1310N |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2764 |
IRF1310NL |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2765 |
IRF1310NLPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2766 |
IRF1310NPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2767 |
IRF1310NS |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2768 |
IRF1310NSTRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2769 |
IRF1310NSTRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2770 |
IRF1310NSTRRPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2771 |
IRF1310S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2772 |
IRF1312 |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2773 |
IRF1312L |
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2774 |
IRF1312LPBF |
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 2775 |
IRF1312PBF |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2776 |
IRF1312S |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2777 |
IRF1312SPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2778 |
IRF1312STRL |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2779 |
IRF1312STRLPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2780 |
IRF1312STRR |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 2781 |
IRF1405L |
Trans MOSFET N-CH 55V 131A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 2782 |
IRF5EA1310 |
100V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package |
International Rectifier |
| 2783 |
IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package |
International Rectifier |
| 2784 |
IRF9131 |
-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs |
Intersil |
| 2785 |
IRF9131 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 2786 |
IRF9131 |
MOSPOWER P-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
| 2787 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
| 2788 |
IRFF131 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 8A |
Siliconix |
| 2789 |
IRFF9131 |
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 2790 |
IRFF9131 |
MOSPOWER P-Channel Enhancement Mode Transistor 60V 6.5A |
Siliconix |
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