No. |
Part Name |
Description |
Manufacturer |
2761 |
2SA1907 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
2762 |
2SA1908 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
2763 |
2SA1909 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
2764 |
2SA1926 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2765 |
2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
2766 |
2SA1932 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
2767 |
2SA1933 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
2768 |
2SA1934 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS |
TOSHIBA |
2769 |
2SA1943 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
2770 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2771 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2772 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2773 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
2774 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2775 |
2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
2776 |
2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
2777 |
2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
2778 |
2SA1960 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
2779 |
2SA1961 |
Silicon PNP epitaxial planer type |
Panasonic |
2780 |
2SA1962 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
2781 |
2SA1963 |
PNP Epitaxial Planar Silicon Transistor High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications |
SANYO |
2782 |
2SA1965 |
PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications |
SANYO |
2783 |
2SA1969 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching Applications |
SANYO |
2784 |
2SA1973 |
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications |
SANYO |
2785 |
2SA1977 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
2786 |
2SA1978 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
2787 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
2788 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
2789 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
2790 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
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