| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
2SC3298 |
SILICON NPN EPITAXIAL TYPE |
TOSHIBA |
| 2762 |
2SC3298A |
Silicon NPN epitaxial power transistor |
TOSHIBA |
| 2763 |
2SC3298B |
Silicon NPN epitaxial power transistor |
TOSHIBA |
| 2764 |
2SC3298B |
SILICON NPN EPITAXIAL TYPE |
TOSHIBA |
| 2765 |
2SC3299 |
SILICON NPNEPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 2766 |
2SC3301 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2767 |
2SC3302 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 2768 |
2SC3303 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 2769 |
2SC3308 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
| 2770 |
2SC3311 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 2771 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 2772 |
2SC3325 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2773 |
2SC3326 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 2774 |
2SC3327 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS |
TOSHIBA |
| 2775 |
2SC3328 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2776 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 2777 |
2SC3330 |
PNP/NPN Epitaxial Planar Silicon Transistors |
SANYO |
| 2778 |
2SC3332 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 2779 |
2SC3338 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2780 |
2SC3345 |
SILICON NPN EPITAXIAL TYPE |
TOSHIBA |
| 2781 |
2SC3346 |
Silicon NPN Epitaxial Type / High Current Switching Applications |
TOSHIBA |
| 2782 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2783 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
| 2784 |
2SC3357 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 2785 |
2SC3360 |
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 2786 |
2SC3361 |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
| 2787 |
2SC3369 |
Si NPN Epitaxial Planar |
National Semiconductor |
| 2788 |
2SC3369 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 2789 |
2SC3377 |
Epitaxial Planar NPN Silicon Transistor |
ROHM |
| 2790 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
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