No. |
Part Name |
Description |
Manufacturer |
2761 |
IRF7353D2UPBF |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package designed and qualified for the consumer market |
International Rectifier |
2762 |
IRF7402UPBF |
20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2763 |
IRF7413UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2764 |
IRF7413ZUPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2765 |
IRF7459UPBF |
20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2766 |
IRF7805ZUPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2767 |
IRF7807ZUPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2768 |
IRF7811AVUPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2769 |
IRF7821UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2770 |
IRF7831UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2771 |
IRF7832UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2772 |
IRF7832ZUPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2773 |
IRF7835UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2774 |
IRF7836UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2775 |
IRF7904UPBF |
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2776 |
IRF8113UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2777 |
IRF8113UTRPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
2778 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
2779 |
IRG4BC20KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
2780 |
IRG4BC20MDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
International Rectifier |
2781 |
IRG4BC20SDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
International Rectifier |
2782 |
IRG4BC20UDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
International Rectifier |
2783 |
IRG4BC20WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
International Rectifier |
2784 |
IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
International Rectifier |
2785 |
IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
International Rectifier |
2786 |
IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
2787 |
IRG4BC30KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
2788 |
IRG4BC30KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
2789 |
IRG4BC30SS |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) |
International Rectifier |
2790 |
IRG4BC30US |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) |
International Rectifier |
| | | |