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Datasheets for NSU

Datasheets found :: 4213
Page: | 89 | 90 | 91 | 92 | 93 | 94 | 95 | 96 | 97 |
No. Part Name Description Manufacturer
2761 IRF7353D2UPBF 30V FETKY - MOSFET and Schottky Diode in a SO-8 package designed and qualified for the consumer market International Rectifier
2762 IRF7402UPBF 20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2763 IRF7413UPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2764 IRF7413ZUPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2765 IRF7459UPBF 20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2766 IRF7805ZUPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2767 IRF7807ZUPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2768 IRF7811AVUPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2769 IRF7821UPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2770 IRF7831UPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2771 IRF7832UPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2772 IRF7832ZUPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2773 IRF7835UPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2774 IRF7836UPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2775 IRF7904UPBF 30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2776 IRF8113UPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2777 IRF8113UTRPBF 30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market International Rectifier
2778 IRG4BC20KDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) International Rectifier
2779 IRG4BC20KS INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) International Rectifier
2780 IRG4BC20MDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) International Rectifier
2781 IRG4BC20SDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) International Rectifier
2782 IRG4BC20UDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) International Rectifier
2783 IRG4BC20WS INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) International Rectifier
2784 IRG4BC30 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) International Rectifier
2785 IRG4BC30 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) International Rectifier
2786 IRG4BC30 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) International Rectifier
2787 IRG4BC30KDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) International Rectifier
2788 IRG4BC30KS INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) International Rectifier
2789 IRG4BC30SS INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) International Rectifier
2790 IRG4BC30US INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) International Rectifier


Datasheets found :: 4213
Page: | 89 | 90 | 91 | 92 | 93 | 94 | 95 | 96 | 97 |



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