| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
2N5225 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 2762 |
2N5226 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2763 |
2N5226 |
NPN-PNP small signal general purpose complementary amplifier . |
Fairchild Semiconductor |
| 2764 |
2N5226 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 2765 |
2N5227 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2766 |
2N5227 |
PNP small signal general purpose amplifier & oscillator. |
Fairchild Semiconductor |
| 2767 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
| 2768 |
2N5228 |
General purpose PNP silicon low-level switching transistor |
ITT Semiconductors |
| 2769 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 2770 |
2N5232A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2771 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 2772 |
2N5262 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2773 |
2N5294 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2774 |
2N5294 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 2775 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2776 |
2N5296 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2777 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 2778 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2779 |
2N5298 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 2780 |
2N5298 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 2781 |
2N5301 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 2782 |
2N5302 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 2783 |
2N5303 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 2784 |
2N5307 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 2785 |
2N5320 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2786 |
2N5320 |
General purpose N-P-N silicon power transistor. |
General Electric Solid State |
| 2787 |
2N5320 |
Professional transistor, general purpose switches |
SGS-ATES |
| 2788 |
2N5321 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2789 |
2N5321 |
General purpose N-P-N silicon power transistor. |
General Electric Solid State |
| 2790 |
2N5321 |
Professional transistor, general purpose switches |
SGS-ATES |
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