| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
| 2762 |
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
| 2763 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
| 2764 |
GT80J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 2765 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 2766 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2767 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2768 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2769 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2770 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2771 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2772 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2773 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2774 |
HBFP-0405-BLK |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 2775 |
HBFP-0405-TR1 |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 2776 |
HBFP-0405-TR2 |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 2777 |
HBFP-0420-BLK |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 2778 |
HBFP-0420-TR1 |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 2779 |
HBFP-0420-TR2 |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 2780 |
HBFP0405 |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 2781 |
HBFP0420 |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 2782 |
HN1A01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2783 |
HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2784 |
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2785 |
HN1B01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2786 |
HN1B04FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2787 |
HN1C01F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2788 |
HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2789 |
HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications |
TOSHIBA |
| 2790 |
HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
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