No. |
Part Name |
Description |
Manufacturer |
2761 |
MRF1004MB |
Microwave Pulse Power NPN silicon Transistor, 4W 960-1215MHz |
Motorola |
2762 |
MRF1004MC |
Microwave Pulse Power NPN silicon Transistor, 4W 960-1215MHz |
Motorola |
2763 |
MRF1008MA |
Microwave Pulse Power NPN silicon Transistor, 8W peak 960-1215MHz |
Motorola |
2764 |
MRF1008MB |
Microwave Pulse Power NPN silicon Transistor, 8W peak 960-1215MHz |
Motorola |
2765 |
MRF1008MC |
Microwave Pulse Power NPN silicon Transistor, 8W peak 960-1215MHz |
Motorola |
2766 |
MRF1015MC |
Microwave Pulse Power NPN silicon Transistor, 15W peak 960-1215MHz |
Motorola |
2767 |
MRF1035MA |
Microwave Pulse Power NPN silicon Transistor, 35W peak 960-1215MHz |
Motorola |
2768 |
MRF1035MC |
Microwave Pulse Power NPN silicon Transistor, 35W peak 960-1215MHz |
Motorola |
2769 |
MRF1090MC |
Microwave Pulse Power NPN silicon Transistor, 90W peak 960-1215MHz |
Motorola |
2770 |
MRF1150M |
Microwave Pulse Power NPN silicon Transistor, 150W peak 1020-1150MHz |
Motorola |
2771 |
MRF1150MC |
Microwave Pulse Power NPN silicon Transistor, 150W peak 960-1215MHz |
Motorola |
2772 |
MRF1250M |
Microwave Pulse Power NPN silicon Transistor, 250W peak 1020-1150MHz |
Motorola |
2773 |
MRF1325M |
Microwave Pulse Power NPN silicon Transistor, 325W peak 1020-1150MHz |
Motorola |
2774 |
MRF6P21190HR6 |
RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET |
Freescale (Motorola) |
2775 |
MRF902 |
NPN silicon high frequency transistor, high-gain, low-noise, small-signal, ideal for use in microstrip thin and thick film applications |
Motorola |
2776 |
MRF912 |
NPN silicon high frequency transistor, high-gain, low-noise, small-signal |
Motorola |
2777 |
MRF931 |
NPN silicon high frequency transistor, low current |
Motorola |
2778 |
MSC3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
2779 |
MTD6N10 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola |
2780 |
MTP2N20 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
2781 |
N13T1 |
Programmable unijunction transistor, silicon planar type N-gate Thyristor |
NEC |
2782 |
N13T2 |
Programmable unijunction transistor, silicon planar type N-gate Thyristor |
NEC |
2783 |
NJG1309VB2-C1 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
2784 |
NJG1309VB2-C10 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
2785 |
NJG1309VB2-C11 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
2786 |
NJG1309VB2-C12 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
2787 |
NJG1309VB2-C2 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
2788 |
NJG1309VB2-C3 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
2789 |
NJG1309VB2-C4 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
2790 |
NJG1309VB2-C5 |
RF M�OSFET Power Transistor, 4OW, 28V 2 - 175 MHz |
Tyco Electronics |
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