| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
OA182 |
Germanium gold PIN universal purpose diode |
Felvezeto Katalogus 1966 |
| 2792 |
OA47 |
Germanium gold bonded diode, general purpose |
Mullard |
| 2793 |
OA47 |
Germanium gold wire switch diode |
VALVO |
| 2794 |
OA5 |
Germanium Gold Bonded Diode |
Philips |
| 2795 |
OA5 |
Germanium gold wire general purpose diode |
VALVO |
| 2796 |
OA7 |
Germanium Gold Bonded Diode |
Philips |
| 2797 |
OA7 |
Germanium gold wire switch diode |
VALVO |
| 2798 |
OA9 |
Germanium Gold Bonded Diode |
Philips |
| 2799 |
OA9 |
Germanium gold wire switch diode |
VALVO |
| 2800 |
P121 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2801 |
P122 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2802 |
P123 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2803 |
P124 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2804 |
P281 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2805 |
P282 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 2806 |
PRA |
High Precision Resistor Arrays, Very Short Deliveries Even on Special Orders, High Stability Passivated Nichrome Resistive Layer, Ratio Tolerance to 0.01%, Pre-Tinned or Gold Terminations over Nickel Barrier |
Vishay |
| 2807 |
PT8811A |
UHF Power Transistor 10W 12.5V gold metallization |
Motorola |
| 2808 |
PT9700 |
1.5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2809 |
PT9700-series |
UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2810 |
PT9701B |
5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2811 |
PT9702B |
20W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2812 |
PT9703B |
10W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2813 |
PT9704A |
30W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2814 |
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 2815 |
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 2816 |
PTF10015 |
50 Watts, 300�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 2817 |
PTF10019 |
70 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 2818 |
PTF10020 |
125 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 2819 |
PTF10021 |
30 Watts, 1.4�1.6 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 2820 |
PTF10031 |
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| | | |
