| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
2N5569 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
| 2792 |
2N5570 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
| 2793 |
2N5571 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 2794 |
2N5572 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 2795 |
2N5573 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 2796 |
2N5574 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 2797 |
2N5589 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2798 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2799 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2800 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 2801 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 2802 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 2803 |
2N5641 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor |
SGS Thomson Microelectronics |
| 2804 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
| 2805 |
2N5643 |
NPN RF transistor 28V Class C 40W |
SGS Thomson Microelectronics |
| 2806 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
| 2807 |
2N5657 |
SILICON NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 2808 |
2N5657 |
SILICON NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 2809 |
2N5681 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 2810 |
2N5681 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 2811 |
2N5682 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 2812 |
2N5682 |
SILICON NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 2813 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 2814 |
2N5886 |
HIGH CURRENT SILICON NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
| 2815 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 2816 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 2817 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 2818 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2819 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2820 |
2N6027 |
Leaded Thyristor PUT |
Central Semiconductor |
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