| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
IDT6116SA90TD |
CMOS STATIC RAM 16K (2K x 8 BIT) |
IDT |
| 2792 |
IDT6116SA90TDB |
CMOS STATIC RAM 16K (2K x 8 BIT) |
IDT |
| 2793 |
IDT6116SA90TP |
CMOS STATIC RAM 16K (2K x 8 BIT) |
IDT |
| 2794 |
IDT6116SA90TPB |
CMOS STATIC RAM 16K (2K x 8 BIT) |
IDT |
| 2795 |
IDT6116SA90Y |
CMOS STATIC RAM 16K (2K x 8 BIT) |
IDT |
| 2796 |
IDT6116SA90YB |
CMOS STATIC RAM 16K (2K x 8 BIT) |
IDT |
| 2797 |
INS8154 |
N-Channel 128-by-8 Bit RAM Input/Output (RAM I/O) |
National Semiconductor |
| 2798 |
ISL5629 |
D/A Converter, Dual, 8 Bit, 130/210MSPS, High Speed, +3.3V |
Intersil |
| 2799 |
ISL6307 |
6-Phase PWM Controller with 8 Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current |
Intersil |
| 2800 |
ISL6307A |
Ultra-high bandwidth 6-Phase PWM Controller with 8 Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current Sensing |
Intersil |
| 2801 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2802 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2803 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2804 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2805 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 2806 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 2807 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 2808 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 2809 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2810 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2811 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2812 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2813 |
K4F170811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 2814 |
K4F170811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 2815 |
K4F170812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 2816 |
K4F170812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 2817 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 2818 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 2819 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 2820 |
K4R271669B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
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