| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
IRF642 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A |
Siliconix |
| 2792 |
IRF643 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A |
Siliconix |
| 2793 |
IRF710 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A |
Siliconix |
| 2794 |
IRF711 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
| 2795 |
IRF712 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A |
Siliconix |
| 2796 |
IRF713 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
| 2797 |
IRF720 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 2798 |
IRF720 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A |
Siliconix |
| 2799 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 2800 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
| 2801 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2802 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 2803 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2804 |
IRF723 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A |
Siliconix |
| 2805 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 2806 |
IRF730 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 2807 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 2808 |
IRF731 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
| 2809 |
IRF732 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2810 |
IRF732 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
| 2811 |
IRF733 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2812 |
IRF733 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
| 2813 |
IRF740 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
| 2814 |
IRF741 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
| 2815 |
IRF742 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A |
Siliconix |
| 2816 |
IRF743 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A |
Siliconix |
| 2817 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 2818 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2819 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 2820 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
| | | |
