| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
PO51M-LJ-178-1 |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 2792 |
PO51M-LPR-PC-1A |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 2793 |
PO51M-P-1.5 |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 2794 |
PO51M-P-1.5W |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 2795 |
PO82M-J-1.5C |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 2796 |
PO82M-P-1.5C |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 2797 |
PT8811A |
UHF Power Transistor 10W 12.5V gold metallization |
Motorola |
| 2798 |
PT9700 |
1.5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2799 |
PT9700-series |
UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2800 |
PT9701B |
5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2801 |
PT9702B |
20W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2802 |
PT9703B |
10W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2803 |
PT9704A |
30W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 2804 |
Q62702-B70 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 2805 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2806 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2807 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2808 |
RCME |
High Frequency Performance Molded Metal film Resistors |
Vishay |
| 2809 |
RCMM |
Molded Metal Film Resistors |
Vishay |
| 2810 |
RE029 |
A dual mode Low Drop Out (LDO) voltage regulator macrocell with a fixed 1.8V output voltage, rated for loads of up to 80 mA and as low as 5 mA. A typical application is baseband memory in mobile terminals. |
Atmel |
| 2811 |
RF1126 |
50 - 5800 MHz Broadband Medium Power SPDT Switch |
Qorvo |
| 2812 |
ROS03A |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2813 |
ROS03B |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2814 |
ROS03C |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2815 |
ROS03D |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2816 |
ROS04A |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2817 |
ROS04B |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2818 |
ROS04C |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2819 |
ROS04D |
NPN silicon epitaxial planar transistor, medium power, low and medium frequency |
ICCE |
| 2820 |
RTL8308B |
3.3 V single chip 8-port ethernet switch controller with embedded memory |
Realtek |
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