| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
MRF164W |
20W 500MHz TMOS Broadband Power FET N-Channel Enhancement Mode |
Motorola |
| 2792 |
MRF172 |
VHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 2793 |
MSAEZ33N20A |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Microsemi |
| 2794 |
MSAFZ33N20A |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Microsemi |
| 2795 |
MTD2955V |
P-Channel Enhancement Mode Field Effect Transistor [Life-time buy] |
Fairchild Semiconductor |
| 2796 |
MTD3055V |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2797 |
MTD3055VL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2798 |
MTH40N06 |
N-Channel Enhancement Mode Power MOS Transistors |
ST Microelectronics |
| 2799 |
MTM12N10 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
| 2800 |
MTM12P05 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
| 2801 |
MTM12P06 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
| 2802 |
MTM12P08 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
| 2803 |
MTM12P10 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
| 2804 |
MTP2955V |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2805 |
MTP3055V |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2806 |
MTP3N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2807 |
MTP3N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2808 |
MTP6N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2809 |
MTY14N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate |
ON Semiconductor |
| 2810 |
MX043 |
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Microsemi |
| 2811 |
NDB4050 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2812 |
NDB4050L |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2813 |
NDB4060 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2814 |
NDB4060L |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2815 |
NDB408A |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2816 |
NDB408AE |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2817 |
NDB408B |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2818 |
NDB408BE |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2819 |
NDB410A |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2820 |
NDB410AE |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
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