No. |
Part Name |
Description |
Manufacturer |
2791 |
BF495 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
2792 |
BF820 |
Small Signal Transistors (NPN) |
General Semiconductor |
2793 |
BF821 |
Small Signal Transistors (PNP) |
General Semiconductor |
2794 |
BF822 |
Small Signal Transistors (NPN) |
General Semiconductor |
2795 |
BF823 |
Small Signal Transistors (PNP) |
General Semiconductor |
2796 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
2797 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
2798 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
2799 |
BFE505 |
NPN wideband differential transistor |
Philips |
2800 |
BFE520 |
NPN wideband differential transistor |
Philips |
2801 |
BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA |
Infineon |
2802 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
2803 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
2804 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
2805 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
2806 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
2807 |
BFR1 |
Small Signal Transistors |
Central Semiconductor |
2808 |
BFR16 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
2809 |
BFR20 |
Professional transistor, general purpose switches |
SGS-ATES |
2810 |
BFR21 |
Professional transistor, general purpose switches |
SGS-ATES |
2811 |
BFR36 |
Small Signal Transistors |
Central Semiconductor |
2812 |
BFR90 |
NPN silicon planar epitaxial transistor in a subminiature plastic transfer-moulded T-package |
Philips |
2813 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
2814 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
2815 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
2816 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
2817 |
BFR96S |
NPN silicon planar epitaxial transistor, primarily intended for MATV applications |
Philips |
2818 |
BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers |
Infineon |
2819 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
2820 |
BFS23 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 28 V supply voltage |
VALVO |
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