No. |
Part Name |
Description |
Manufacturer |
2791 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
2792 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
2793 |
K4R271669B |
Direct RDRAM |
Samsung Electronic |
2794 |
K4R271669B |
Direct RDRAM� Data Sheet |
Samsung Electronic |
2795 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
2796 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
2797 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
2798 |
K4R271669B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
2799 |
K4R271669B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
2800 |
K4R271669B-NB(M)CCK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
2801 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
2802 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
2803 |
K4R271669B-NCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
Samsung Electronic |
2804 |
K4R271669D |
Direct RDRAM� Data Sheet |
Samsung Electronic |
2805 |
K4R271669D-T |
128Mbit RDRAM(D-die) |
Samsung Electronic |
2806 |
K4R271669D-TCS8 |
128Mbit RDRAM(D-die) |
Samsung Electronic |
2807 |
K4R271669E |
128Mbit RDRAM(E-die) |
Samsung Electronic |
2808 |
K4R271669F |
128Mbit RDRAM(F-die) |
Samsung Electronic |
2809 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
2810 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
2811 |
K4R271869B-MCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
2812 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
2813 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
2814 |
K4R271869B-NCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
2815 |
K4R441869A |
Direct RDRAM |
Samsung Electronic |
2816 |
K4R441869A-N(M) |
K4R271669A-N(M):Direct RDRAM� Data Sheet |
Samsung Electronic |
2817 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
2818 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
2819 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
2820 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
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