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Datasheets for NG E

Datasheets found :: 10837
Page: | 90 | 91 | 92 | 93 | 94 | 95 | 96 | 97 | 98 |
No. Part Name Description Manufacturer
2791 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
2792 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
2793 K4R271669B Direct RDRAM Samsung Electronic
2794 K4R271669B Direct RDRAM� Data Sheet Samsung Electronic
2795 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
2796 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
2797 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
2798 K4R271669B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
2799 K4R271669B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
2800 K4R271669B-NB(M)CCK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
2801 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
2802 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
2803 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
2804 K4R271669D Direct RDRAM� Data Sheet Samsung Electronic
2805 K4R271669D-T 128Mbit RDRAM(D-die) Samsung Electronic
2806 K4R271669D-TCS8 128Mbit RDRAM(D-die) Samsung Electronic
2807 K4R271669E 128Mbit RDRAM(E-die) Samsung Electronic
2808 K4R271669F 128Mbit RDRAM(F-die) Samsung Electronic
2809 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
2810 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
2811 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
2812 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
2813 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
2814 K4R271869B-NCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
2815 K4R441869A Direct RDRAM Samsung Electronic
2816 K4R441869A-N(M) K4R271669A-N(M):Direct RDRAM� Data Sheet Samsung Electronic
2817 K4R441869A-N(M)CG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2818 K4R441869A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2819 K4R441869A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2820 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic


Datasheets found :: 10837
Page: | 90 | 91 | 92 | 93 | 94 | 95 | 96 | 97 | 98 |



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