| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
HMPSH10 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 2792 |
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2793 |
HN1B01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2794 |
HN1B04FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2795 |
HN1C01F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2796 |
HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2797 |
HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications |
TOSHIBA |
| 2798 |
HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 2799 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2800 |
HN2C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2801 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2802 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2803 |
HN3C10FE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2804 |
HN3C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2805 |
HN3C12 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 2806 |
HN3C14 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 2807 |
HN3C14FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2808 |
HN3G01 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR |
TOSHIBA |
| 2809 |
HN3G01J |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR |
TOSHIBA |
| 2810 |
HN4400 |
NPN Epitaxial Silicon Transistor |
Honey Technology |
| 2811 |
HN4401 |
NPN Epitaxial Silicon Transistor |
Honey Technology |
| 2812 |
HN9C01FE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2813 |
HN9C01FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2814 |
HN9C09FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2815 |
HN9C14FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2816 |
HN9C15FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2817 |
HN9C22FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2818 |
HPH2369 |
Emitter to base voltage:4.5V 500mA NPN epitaxial planar transistor for general purpose switching and amplifier applications |
Hi-Sincerity Microelectronics |
| 2819 |
HPH2369 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Micro Electronics |
| 2820 |
HPN2222A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
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