| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
SS108D |
Fast Silicon NPN Planar Epitaxy Transistor |
RFT |
| 2792 |
SS108E |
Fast Silicon NPN Planar Epitaxy Transistor |
RFT |
| 2793 |
SS109 |
Fast Silicon NPN Planar Epitaxy Transistor |
RFT |
| 2794 |
SS109A |
Fast Silicon NPN Planar Epitaxy Transistor |
RFT |
| 2795 |
SS109B |
Fast Silicon NPN Planar Epitaxy Transistor |
RFT |
| 2796 |
SS109C |
Fast Silicon NPN Planar Epitaxy Transistor |
RFT |
| 2797 |
SS109D |
Fast Silicon NPN Planar Epitaxy Transistor |
RFT |
| 2798 |
STD815CP40 |
Complementary transistor pair in a single package |
ST Microelectronics |
| 2799 |
STD830CP40 |
Complementary transistor pair in a single package |
ST Microelectronics |
| 2800 |
STEVAL-PCC019V1 |
USB to I2C trimming interface board with embedded load for automatic power supply trimming based on the SEA01 |
ST Microelectronics |
| 2801 |
TA1.0 |
HIGH-ENERGY TRIGGERED SPARK GAPS |
Clare Inc |
| 2802 |
TA10.0 |
HIGH-ENERGY TRIGGERED SPARK GAPS |
Clare Inc |
| 2803 |
TA15.0 |
HIGH-ENERGY TRIGGERED SPARK GAPS |
Clare Inc |
| 2804 |
TA2.0 |
HIGH-ENERGY TRIGGERED SPARK GAPS |
Clare Inc |
| 2805 |
TA5.0 |
HIGH-ENERGY TRIGGERED SPARK GAPS |
Clare Inc |
| 2806 |
TA7.0 |
HIGH-ENERGY TRIGGERED SPARK GAPS |
Clare Inc |
| 2807 |
TA7411 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 2808 |
TA7532 |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
| 2809 |
TA7706 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 2810 |
TA7707 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 2811 |
TA7852 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 2812 |
TA7943 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 2813 |
TA7982 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
| 2814 |
TA8172 |
12.5V UHF Mobile Silicon NPN Overlay Transistor |
RCA Solid State |
| 2815 |
TA8236 |
20W (PEP) Emitter-Ballasted Overlay Transistor for 2-to-30-MHz Single Sideband Linear Amplifier Applications |
RCA Solid State |
| 2816 |
TA8439 |
6W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 2817 |
TA8440 |
2W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 2818 |
TA8493 |
12.5V UHF Mobile Silicon NPN Overlay Transistor |
RCA Solid State |
| 2819 |
TA8647 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 2820 |
TA8648 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
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