| No. |
Part Name |
Description |
Manufacturer |
| 2821 |
BCX55-10 |
60 V, 1 A NPN medium power transistor |
NXP Semiconductors |
| 2822 |
BCX55-16 |
60 V, 1 A NPN medium power transistor |
Nexperia |
| 2823 |
BCX55-16 |
60 V, 1 A NPN medium power transistor |
NXP Semiconductors |
| 2824 |
BCX56 |
80 V, 1 A NPN medium power transistor |
Nexperia |
| 2825 |
BCX56 |
60 V, 1 A NPN medium power transistor |
NXP Semiconductors |
| 2826 |
BCX56-10 |
80 V, 1 A NPN medium power transistor |
Nexperia |
| 2827 |
BCX56-10 |
60 V, 1 A NPN medium power transistor |
NXP Semiconductors |
| 2828 |
BCX56-16 |
80 V, 1 A NPN medium power transistor |
Nexperia |
| 2829 |
BCX56-16 |
60 V, 1 A NPN medium power transistor |
NXP Semiconductors |
| 2830 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 2831 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 2832 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 2833 |
BF547 |
NPN 1 GHz wideband transistor |
Philips |
| 2834 |
BF547W |
NPN 1 GHz wideband transistor |
Philips |
| 2835 |
BF747 |
NPN 1 GHz wideband transistor |
Philips |
| 2836 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 2837 |
BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 2838 |
BFP182R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 2839 |
BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 2840 |
BFQ17 |
NPN 1 GHz wideband transistor |
Philips |
| 2841 |
BFQ29 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 2842 |
BFQ29 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 2843 |
BFQ29P |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 2844 |
BFQ29P |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 2845 |
BFQ71 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
Siemens |
| 2846 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 2847 |
BFS 17P |
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz |
Infineon |
| 2848 |
BFS17 |
NPN 1 GHz wideband transistor |
Philips |
| 2849 |
BFS17W |
NPN 1 GHz wideband transistor |
NXP Semiconductors |
| 2850 |
BFS17W |
NPN 1 GHz wideband transistor |
Philips |
| | | |
