| No. |
Part Name |
Description |
Manufacturer |
| 2821 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 2822 |
1PS66SB63 |
5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 2823 |
1PS66SB63 |
1PS66SB63; 1PS79SB63; 5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 2824 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Nexperia |
| 2825 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
NXP Semiconductors |
| 2826 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Philips |
| 2827 |
1PS66SB82 |
1PS66SB82; 1PS88SB82; 15 V, 30 mA low Cd Schottky barrier diodes |
Philips |
| 2828 |
1PS76SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Nexperia |
| 2829 |
1PS76SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
| 2830 |
1PS79SB17 |
4 V, 30 mA low capacitance Schottky barrier diode |
Nexperia |
| 2831 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
| 2832 |
1PS79SB17 |
1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 2833 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 2834 |
1PS88SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Nexperia |
| 2835 |
1PS88SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
NXP Semiconductors |
| 2836 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
| 2837 |
1S134 |
Diffused silicon diode 400V, color code brown-orange-yellow |
Texas Instruments |
| 2838 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2839 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2840 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 2841 |
1SS321 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 2842 |
1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 2843 |
1SS348 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2844 |
1SS357 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2845 |
1SS369 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) |
TOSHIBA |
| 2846 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2847 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2848 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2849 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 2850 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
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