| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
STV7612 |
96 OUTPUT PLASMA DISPLAY PANEL DATA DRIVER WITH 100V ABSOLUTE MAXIMUM RATING, 5V SUPPLY LOGIC,-70/+90 MA SOURCE/SINK OUTPUT MOS |
ST Microelectronics |
| 2852 |
STV7612/WAF |
96 OUTPUT PLASMA DISPLAY PANEL DATA DRIVER WITH 100V ABSOLUTE MAXIMUM RATING, 5V SUPPLY LOGIC,-70/+90 MA SOURCE/SINK OUTPUT MOS |
ST Microelectronics |
| 2853 |
STV7612/WP |
96 OUTPUT PLASMA DISPLAY PANEL DATA DRIVER WITH 100V ABSOLUTE MAXIMUM RATING, 5V SUPPLY LOGIC,-70/+90 MA SOURCE/SINK OUTPUT MOS |
ST Microelectronics |
| 2854 |
STW55NE10 |
N - CHANNEL 100V - 0.021Ohm - 55A - TO247 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 2855 |
STW55NE10 |
N-CHANNEL 100V - 0.021 OHM - 55A TO247 STRIPFET POWER MOSFET |
ST Microelectronics |
| 2856 |
STW60NE10 |
N - CHANNEL 100V - 0.016Ohm - 60A TO-247 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 2857 |
STW60NE10 |
N-CHANNEL 100V - 0.016 OHM - 60A TO-247 STRIPFET POWER MOSFET |
ST Microelectronics |
| 2858 |
STW80NF10 |
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 2859 |
STW80NF10 |
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
| 2860 |
STY140NS10 |
N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET |
SGS Thomson Microelectronics |
| 2861 |
STY140NS10 |
N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET |
ST Microelectronics |
| 2862 |
T0,8N100 |
0.8A 100V Thyristor |
IPRS Baneasa |
| 2863 |
T10A100B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 90V,max. Ir = 50uA @ Vr = 100V,max, Bulk (500pcs). |
Littelfuse |
| 2864 |
T10A100T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 90V,max. Ir = 50uA @ Vr = 100V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 2865 |
T10C110BF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 120mA,th min. |
Littelfuse |
| 2866 |
T10C110EF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 180mA,th min. |
Littelfuse |
| 2867 |
T10N1 |
10 AMPS THYRISTOR 100V |
IPRS Baneasa |
| 2868 |
T10R1 |
10 AMPS THYRISTOR 100V |
IPRS Baneasa |
| 2869 |
T12F100 |
THYRISTOR 100V |
AEG-TELEFUNKEN |
| 2870 |
T12N100 |
THYRISTOR 100V |
AEG-TELEFUNKEN |
| 2871 |
T15.1N100 |
THYRISTOR 100V |
AEG-TELEFUNKEN |
| 2872 |
T15N/100T |
PNPN silicon power thyristor 100V |
Mikroelektronikai Vallalat |
| 2873 |
T16N1 |
16 AMPS 100V THYRISTOR |
IPRS Baneasa |
| 2874 |
T16R1 |
16 AMPS 100V THYRISTOR |
IPRS Baneasa |
| 2875 |
T1N1 |
1 AMP 100V THYRISTOR |
IPRS Baneasa |
| 2876 |
T1R1 |
1 AMP 100V FAST THYRISTOR |
IPRS Baneasa |
| 2877 |
T201 |
200A 100V THYRISTOR, anode is electrically connected to the metal case |
IPRS Baneasa |
| 2878 |
T201A |
200A 100V THYRISTOR, anode is electrically connected to the metal case |
IPRS Baneasa |
| 2879 |
T201B |
200A 100V THYRISTOR, anode is electrically connected to the metal case |
IPRS Baneasa |
| 2880 |
T201C |
200A 100V THYRISTOR, anode is electrically connected to the metal case |
IPRS Baneasa |
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