| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
| 2852 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 2853 |
2N6101 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 |
SESCOSEM |
| 2854 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 2855 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 2856 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 2857 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 2858 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 2859 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 2860 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 2861 |
2N6171 |
SCRs 35 Ampere RMS, 100V |
Motorola |
| 2862 |
2N6172 |
SCRs 35 Ampere RMS, 200V |
Motorola |
| 2863 |
2N6173 |
SCRs 35 Ampere RMS, 400V |
Motorola |
| 2864 |
2N6174 |
SCRs 35 Ampere RMS, 600V |
Motorola |
| 2865 |
2N6233 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
| 2866 |
2N6235 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
| 2867 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 2868 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 2869 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 2870 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 2871 |
2N6342A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 200V |
Motorola |
| 2872 |
2N6343A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 400V |
Motorola |
| 2873 |
2N6344A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 600V |
Motorola |
| 2874 |
2N6345A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 800V |
Motorola |
| 2875 |
2N6346A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 200V |
Motorola |
| 2876 |
2N6347A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 400V |
Motorola |
| 2877 |
2N6348A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 600V |
Motorola |
| 2878 |
2N6349A |
Silicon Bidirectional Triode Thyristos 12 Ampere RMS 800V |
Motorola |
| 2879 |
2N6394 |
SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
Motorola |
| 2880 |
2N6394 |
Thyristor, 12 amperes, 50 volt |
Teccor Electronics |
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