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Datasheets for 00W

Datasheets found :: 44791
Page: | 92 | 93 | 94 | 95 | 96 | 97 | 98 | 99 | 100 |
No. Part Name Description Manufacturer
2851 CSD794R 10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744R Continental Device India Limited
2852 CSD794Y 10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y Continental Device India Limited
2853 CSD811 60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. Continental Device India Limited
2854 CSD880 30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 Continental Device India Limited
2855 CSD880GR 30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR Continental Device India Limited
2856 CSD880O 30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O Continental Device India Limited
2857 CSD880Y 30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y Continental Device India Limited
2858 CSD882 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Continental Device India Limited
2859 CSD882E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E Continental Device India Limited
2860 CSD882P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P Continental Device India Limited
2861 CSD882Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q Continental Device India Limited
2862 CSD882R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R Continental Device India Limited
2863 CSL13003 1.100W High Voltage NPN Plastic Leaded Transistor. 400V Vceo, 1.500A Ic, 13 - 27 hFE. Continental Device India Limited
2864 CT282 0.500W General purpose diode, 36.0V Vr, 0.025uA Ir Continental Device India Limited
2865 CT283 0.500W General purpose diode, 70.0V Vr, 0.025uA Ir Continental Device India Limited
2866 CT284 0.500W General purpose diode, 130.0V Vr, 0.025uA Ir Continental Device India Limited
2867 CT285 0.500W General purpose diode, 180.0V Vr, 0.025uA Ir Continental Device India Limited
2868 CT286 0.500W General purpose diode, 225.0V Vr, 0.025uA Ir Continental Device India Limited
2869 CT287 0.500W General purpose diode, 300.0V Vr, 0.025uA Ir Continental Device India Limited
2870 CTN368 1.000W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE Continental Device India Limited
2871 CTN636 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 25 - hFE Continental Device India Limited
2872 CTN640 1.000W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25 - hFE Continental Device India Limited
2873 CVG639 2.500W General Purpose NPN Plastic Leaded Transistor. 135V Vceo, 1.000A Ic, 25 - hFE Continental Device India Limited
2874 CVG640 2.500W General Purpose PNP Plastic Leaded Transistor. 135V Vceo, 1.000A Ic, 25 - hFE Continental Device India Limited
2875 D1025UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED SemeLAB
2876 D2084UK TetraFET 100W - 28V - 900MHz SemeLAB
2877 D5K1 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL New Jersey Semiconductor
2878 D5K2 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL New Jersey Semiconductor
2879 DB-900-100W 100W / 26V / 869-894 MHZ PA USING 2X PD57060S SGS Thomson Microelectronics
2880 DB-900-100W 100W / 26V / 869-894 MHZ PA USING 2X PD57060S ST Microelectronics


Datasheets found :: 44791
Page: | 92 | 93 | 94 | 95 | 96 | 97 | 98 | 99 | 100 |



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