| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
PMD12K40 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 2852 |
PMD12K60 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 2853 |
PMD12K80 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 2854 |
PMEG1020EH |
PMEG1020EH; 10 V, 2 A ultra low Vf MEGA Schottky barrier rectifier in SOD123F package |
Philips |
| 2855 |
PMEG2010AEH |
20 V, 1 A very low Vf MEGA Schottky barrier rectifier in SOD123F package |
Philips |
| 2856 |
PMEG2020EH |
20 V, 2 A very low Vf MEGA Schottky barrier rectifier in SOD123F package |
Philips |
| 2857 |
PMEG2020EH |
PMEG2020EH; 20 V, 2 A very low Vf MEGA Schottky barrier rectifier in SOD123F package |
Philips |
| 2858 |
PP225D120 |
POW-R-PAK 225A / 1200V Half Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 2859 |
PP300D120 |
POW-R-PAK 300A / 1200V Half Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 2860 |
PP450D120 |
POW-R-PAK 450A / 1200V Half Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 2861 |
PP600D120 |
POW-R-PAK 600A / 1200V Half Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 2862 |
PP900D120 |
POW-R-PAK 900A / 1200V Half Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 2863 |
PQMD12 |
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ |
Nexperia |
| 2864 |
PQMD12 |
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ |
NXP Semiconductors |
| 2865 |
PRMD12 |
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) |
Nexperia |
| 2866 |
PSD125_08 |
800 V three phase rectifier bridge |
POWERSEM |
| 2867 |
PSD125_12 |
1200 V three phase rectifier bridge |
POWERSEM |
| 2868 |
PSD125_14 |
1400 V three phase rectifier bridge |
POWERSEM |
| 2869 |
PSD125_16 |
1600 V three phase rectifier bridge |
POWERSEM |
| 2870 |
PSD125_18 |
1800 V three phase rectifier bridge |
POWERSEM |
| 2871 |
PUMD12 |
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ |
Nexperia |
| 2872 |
PUMD12 |
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ |
NXP Semiconductors |
| 2873 |
PUMD12 |
NPN/PNP resistor-equipped transistor |
Philips |
| 2874 |
Q60103-D121 |
pnp germanium transistors |
Siemens |
| 2875 |
Q62702-D1258 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 2876 |
Q62702-D1259 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 2877 |
Q62702-D1262 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 2878 |
Q62702-D1263 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 2879 |
Q62702-D1264 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 2880 |
Q62702-D1267 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
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